Semiconductor memory device

ABSTRACT

A semiconductor memory device includes a memory cell having a circuit configuration in which a potential supplied to sources of load transistors  108  and  111  included in a latch section is different from at least one of a potential supplied to a word line  105  and a potential supplied to bit lines  106  and  107;  a latch potential control circuit  101  for switching a normal operation mode and a test mode to each other in accordance with a signal applied to a test mode setting pin  102;  and a read/write control circuit  103  for controlling the potential supplied to the sources of the load transistors  108  and  111  to be lower than at least one of the potential supplied to the word line  105  and the potential supplied to the bit lines  106  and  107,  during an arbitrary period of at least a read operation in the test mode.

RELATED APPLICATIONS

This application is a divisional of U.S. application Ser. No.12/425,018, filed on Apr. 16, 2009, which is a divisional of U.S.application Ser. No. 11/634,110, filed on Dec. 6, 2006, now U.S. Pat.No. 7,542,368, claiming priority of Japanese Patent Application No.2005-353947, filed on Dec. 7, 2005, the entire contents of each of whichare hereby incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a technology for an SRAM circuit as asemiconductor memory device, and more particularly to a technology forscreening bits which are defective in cell characteristics includingstatic noise margin, write level or the like, which is caused byover-time deterioration or operation noise of a logic circuit located inthe vicinity of the SRAM.

2. Description of the Background Art

In recent precision semiconductor devices, increase in random variancein transistor (hereinafter, referred to as “Tr”) characteristics causedby size reduction, and variance in SRAM characteristics caused by therandom variance in Tr characteristics, are serious problems. Insemiconductor devices of the conventional generation, it was sufficientto obtain a certain degree of beta ratio, which is the ratio of thedriving capability of a drive Tr with respect to the driving capabilityof an access Tr. The cell size was substantially determined inconsideration of only the processing conditions during the production.Therefore, the influence of the random variance was trivial enough to beburied in the discussion on the inter-lot variance (hereinafter,referred to the “global variance”).

However, in semiconductor devices of the 65 nm rule or newer processgenerations, the ratio of random variance in each chip with respect toglobal variance has been rapidly increasing due to the size reduction.Therefore, with the conventional structure, it is very difficult toproduce devices having good cell characteristics in the Mbit order. Inorder to solve this, techniques are being studied by which, for example,good cell characteristics are obtained by making the gate length, gatewidth or other elements of the device size larger than the processinglimit, or requirements for the SRAM cell characteristics are alleviatedby dynamically controlling the power supply potential from theperipheral circuits to the memory cells. See, for example, “ISSCC2C05Low-Power Embedded SRAM Modules with Expanded Margins for Writing”,Hitach, Renesas.

Despite such efforts, it is becoming more difficult to obtain goodproducts than in the past process generations. Cell characteristicmargins are being reduced with certainty. Important SRAM characteristicsinclude static noise margin (hereinafter, referred to as “SNM”) whichindicates the cell stability during the read operation, write levelindicating the ease of writing, cell current during the read operation,and standby current. With reference to FIG. 18, a mechanism by which aninsufficient SNM leads to malfunction will be described.

It is assumed now that bit lines 1001 and 1002 are precharged to a Highpotential, an intermediate node 1003 is at a Low potential, anintermediate node 1004 is at a High potential, and the lines 1001 and1002 and the nodes 1003 and 1004 are all stable. A read operation isperformed from this state. When the potential of a word line 1000becomes High, an access Tr 1005 is place into an ON state. Since theaccess Tr 1005 and a drive Tr 1012 in an ON state each other, thepotential of the intermediate node 1003 becomes slightly higher than theLow potential. If the potential of the intermediate node 1003 exceedsthe logic threshold of an inverter 1007, the inverter 1007 performsinversion. As a result, the intermediate node 1004 is driven from a Highpotential to a Low potential. This causes malfunction. The logicthreshold of the inverter 1007 becomes high when a load Tr 1009 has ahigh capability and a drive Tr 1010 has a low capability. Namely, whenthe load Tr 1009 has a lower Vt potential, there is a larger margin forthe rise of the potential of the intermediate node 1003. The SNM isdeteriorated when the access Tr 1005 is at a Low Vt potential, the driveTr 1012 is at a High Vt potential, the load Tr 1009 is at a High Vtpotential, and the drive Tr 1010 is at a Low Vt potential. The problemof variance also occurs regarding other characteristics including writelevel and cell current.

Under the circumstances, the present inventors found the practicalcauses of the above problems.

First, the cell characteristics are deteriorated over-time at a highpossibility. This was not conspicuous in the devices in the conventionalprocess generations because there was a large margin for the cellcharacteristics. However, this is conspicuous today because the marginfor good cell characteristics is very small, or slightly defective bitsare handled by the redundancy rescue technology and shipped assatisfactory products. In addition, SNM is sensitive against the powersupply noise or the like as is clear from the name. Therefore, somememories operate normally when independently inspected, but becomedefective due to the noise supplied to the power supply system as aresult of the operation of a great number of logics in the vicinitythereof.

Specific examples of the over-time deterioration include NBTI (NegativeBias Temperature Instability) deterioration of Pch Tr. This is aphenomenon of device deterioration that when the state where a Pch Tr isin an ON state, i.e., the state where the gate is at a low potential, iscontinued, the Vt potential of the Pch Tr is shifted to a higherpotential. Examples of the over-time deterioration of Nch Tr include hotcarrier deterioration discussed regarding the 5V- and 3V-systemgenerations.

In the low-voltage precision process, the power supply itself is lowerand the NBTI deterioration of Pch Tr occurs by merely placing the Pch Trinto a standby state with the power supply being ON. By contrast, thehot carrier deterioration of Nch Tr occurs only during a transitionoperation in which the LSI is operated and the gate is in anintermediate potential state. For this and other reasons, the hotcarrier deterioration of Nch Tr is not considered as a serious problem.

Due to the difference in the over-time deterioration mode between Pch Trand Nch Tr or the like, it may occur that the Vt potential of the Nch Tris kept almost the same and the Vt potential of only the Pch Tr israised from the initial state. In the state where there is almost nomargin between the operation limit and the global variance assumed fromthe point of device production, when the Pch load Tr is deterioratedover-time and the Vt potential thereof is raised, an SRAM which had agood SNM at the pre-shipment test exhibits SNM deterioration due to thereduction in the logic threshold of the inverter with which the SRAM isto be incorporated.

The NBTI deterioration influences the write level corresponding to thewrite margin in addition to the SNM corresponding to the read margin. Itis true that as the Vt potential of the Pch Tr is raised, the write ismade easier. However, the stress by the NBTI deterioration varies inaccordance with the potential state. Therefore, among complementaryinverter latches, the NBTI deterioration may occur only in the Pch whichis in an ON state for an extended period of time. As a result, whereasthe Vt potential of one load Tr 1009 is not shifted, the Vt potential ofthe other load Vt 1011 may raised over-time due to NBTI deterioration.When the potential of the bit line 1002 is lowered to perform a writeoperation, the potential of the intermediate node 1004 becomes Low sincethe load Tr 1009 and an access Tr 1006 in an ON state each other. Theinverter 1008 receives this potential. When the Vt potential of the loadTr 1011 is high, the logic threshold of the inverter 1008 is low, andthe write level may be deteriorated so that the write operation cannotbe performed unless the potential of the intermediate node 1004 isfurther lowered. In the above, the deterioration on the Pch Tr side isdescribed, but the deterioration on the Nch Tr side may possibly becomeconspicuous in the future. The over-time deterioration in the cellcharacteristics is not limited to the situations described above.

Defects may occur due to an operational environment in addition to theover-time deterioration. For example, even when no problem is found byan independent SRAM macro test or evaluation using a tester, defects mayoccur by the highly active operation performed by the logic sectionlocated in the vicinity of the SRAM on the LSI or by the low strength ofthe board on which the SRAM is mounted. The present inventors concludedthat it is necessary to obtain an appropriate cell characteristic marginagainst the cell characteristic deterioration caused over-time or by anoperational environment.

SUMMARY OF THE INVENTION

Therefore, an object of the present invention is to provide asemiconductor memory device capable of obtaining appropriate cellcharacteristic margins and thus avoiding the reduction in the yield evenwhen the cell characteristics are deteriorated over-time or by a changein the operational environment.

The present invention is directed to a semiconductor memory device forstoring information on a memory cell using a potential change in a wordline and a bit line. In order to attain the object mentioned above, thesemiconductor memory device according to the present invention comprisesa memory cell, a first control circuit and a second control circuit.

The memory cell has a circuit configuration in which a potentialsupplied to a source of a load Tr included in a latch section isdifferent from at least one of a potential supplied to the word line anda potential supplied to the bit line. The control circuit switches anormal operation mode and a test mode to each other in accordance with asignal applied to a test mode setting pin. During an arbitrary period ofat least a read operation (or a write operation) in the test mode, thesecond control circuit controls the potential supplied to the source ofthe load Tr to be lower (or higher) than at least one of the potentialsupplied to the word line and the potential supplied to the bit line, orcontrols the load Tr to be in a non-driven state by cutting off thesupply of the potential to the source of the load Tr by a switchingdevice.

The memory cell may have a circuit configuration in which a potentialsupplied to the word line is different from at least one of a potentialsupplied to a source of a load Tr included in a latch section and apotential supplied to the bit line. In this case, during an arbitraryperiod of at least a read operation (or a write operation) in the testmode, the second control circuit controls the potential supplied to theword line in a ON state, corresponding to at least one of the potentialsupplied to the source of the load Tr and the potential supplied to thebit line, to be higher (or lower) than a potential in the normaloperation mode.

The memory cell may have a configuration in which a potential suppliedto the bit line is different from at least one of a potential suppliedto a source of a load Tr included in a latch section and a potentialsupplied to the word line. In this case, during an arbitrary period ofat least a read operation (or a write operation) in the test mode, thesecond control circuit controls the potential supplied to a bit linewhich is kept at a higher potential during a write operation, among thebit lines corresponding to at least one of the potential supplied to thesource of the load Tr and the potential supplied to the word line, to behigher (lower) than a potential in the normal operation mode.

In the case where the memory cell has a latch section including a Pch Trand an Nch Tr, during an arbitrary period of at least a read operation(or a write operation) in the test mode, the second control circuit maycontrol a substrate potential of the Pch Tr to be higher (or lower) thana potential in the normal operation mode and apply a back bias (or aforward bias) to the Pch Tr, or control a substrate potential of the NchTr to be higher (or lower) than a potential in the normal operation modeand apply a forward bias (or a back bias) to the Nch Tr.

Preferably, also during an arbitrary period of a write operation in thenormal operation mode, the second control circuit controls the potentialsupplied to the source of the load Tr to be lower than at least one ofthe potential supplied to the word line and the potential supplied tothe bit line, or controls the load Tr to be in the non-driven state bycutting off the supply of the potential to the source of the load Tr bythe switching device. The second control circuit preferably controls thepotential in the test mode only on a column or a row on which a memorycell is present which is a target of the read operation.

The second control circuit may control a potential supplied to a bitline, among bit lines, which is operated at a lower potential during awrite operation to the memory cell to be higher than a potential in thenormal operation mode, in the test mode. The semiconductor memory devicemay further comprise a BIST circuit for providing a test signal to thetest mode setting pin and performing an inspection including a stresstest.

The present invention is also directed to a method for inspecting asemiconductor memory device for storing information on a memory cellusing a potential change in a word line and a bit line. In order toattain the object mentioned above, according to the method according tothe present invention, after a write operation, a potential of theentirety of a macro power supply or a power supply section including atleast a memory cell is temporarily lowered from a normal potential to apredetermined lower potential; the potential of the power supply isreturned back to the normal potential, and then a read operation isperformed; and a pass/fail determination is performed by the readoperation.

Alternatively, after a write operation is performed at a normal powersupply potential, the potential of the entirety of a macro power supplyis temporarily lowered from the normal potential to a predeterminedlower potential, or the semiconductor memory device is set to apredetermined static noise margin stress mode, and a read operation isperformed without a pass/fail determination; the potential of the powersupply is returned back to the normal potential, and then the readoperation is performed again; and the pass/fail determination isperformed by the read operation performed the second time.

In the case of performing the read operation without the pass/faildetermination, when the word line is placed into an ON state, it isdesirable to activate a plurality of the word lines simultaneously or tokeep the bit line precharged.

According to the present invention, the semiconductor device can be setto a test mode which is different from the normal operation mode. Thepotential of a first power supply in the memory cell latch section islower than the potential of a second power supply, which is at least oneof the word line driver power supply and the bit line precharge circuitpower supply. Therefore, the logic threshold of an inverter is loweredby the effect of the first power supply, and the latch node potential ata Low potential is raised by the effect of the second power supply. As aresult, data destruction in the read operation is likely to occur. Thus,the SNM deterioration which is likely to occur over-time is tested in asevere condition, and an operation margin of the LSI against theover-time deterioration can be obtained. Regarding the cell current forlowering the potential of the bit line in the read operation, the Highpotential of the gate of the drive Tr is slightly lowered. Thesource-drain potential of the access Tr and the drive Tr supplied with aback bias which dominates the cell current is not lowered as long as thepotential of the bit line and the potential of the word line which isapplied to the gate of the access Tr is kept high. Regarding the writeoperation, if merely the latch potential is lowered, the operationmargin is increased. If the test does not need to be used also as thetest for the write margin, the test can be performed while the powersupply of the latch section is low even during the write operation. Atest in consideration of high temperature can be performed at roomtemperature or a low temperature. This suppresses an increase in theinspection cost.

According to the present invention, the power supply from the inverterlatch section is cut off in the read operation. This lowers the dataretaining capability of the memory cell latch section. Therefore, thepotential of the word line is made high in the read operation. When theaccess Tr becomes conductive, erroneous read is likely to occur.

According to the present invention, when the ON resistance of the accessTr is reduced or when the precharge potential of the bit line is raised,erroneous read is likely to occur. Since the magnitude of the cellcurrent is higher than that in the normal operation mode, no loss in theyield occurs for any reason related to the cell current.

According to the present invention, by applying a back bias to thesubstrate potential of the Pch Tr of the memory cell, a stress test withthe SNM being lowered can be performed. Especially, merely the thresholdvoltage of the Pch Tr is increased and there is no change on the Nch Trside. Therefore, the magnitude of the cell current is not changed fromthat in the normal operation mode and thus an accurate test is madepossible. Accordingly, it is only necessary to apply the substrate biasin the read operation. No test pattern needs to be added, which shortensthe test time. A stress test with the SNM being lowered can also beperformed by applying a forward bias to the substrate potential of theNch Tr of the memory cell.

According to the present invention, the “write guarantee circuit” usedin the normal operation is also usable as the “stress circuit for theread operation” in the test mode. This realizes effective use of Tr,which reduces the area of the memory macro. The power supply potentialcontrol is performed for each column and so is faster than in the casewhere such control is performed on the entirety of the memory cellarray. This makes it easy to set the potential at the same level as thepotential in the normal operation for the write operation, and at thesame level as the potential in the stress mode for the read operation.Therefore, the SNM stress test can be also used as the normal read test.Thus, the test pattern is prevented from being extended, namely, anincrease in the test cost is avoided. A write level stress mode can becreated in the test mode by (i) increasing the ON resistance of theaccess Tr to deteriorate the write characteristic, (ii) lowering theHigh write potential level from the bit line or raising the Low levelwrite potential from the bit line to decrease the write capability, or(iii) applying a forward bias to the substrate potential of the Pch Trof the memory cell or applying a back bias to the substrate potential ofthe Nch Tr of the memory cell to increase the data retaining capabilityof the memory latch.

According to the present invention, the “SNM guarantee circuit” used inthe normal operation is also usable as the “write level stress circuit”in the test mode. This realizes effective use of Tr, which reduces thearea of the memory macro. The power supply potential control isperformed for each column, and so is faster than in the case where suchcontrol is performed on the entirety of the memory cell array. Thismakes it easy to set the potential at the same level as the potential inthe normal operation for the write operation, and at the same level asthe potential in the stress mode for the read operation. The write levelstress test can be also used as the normal write test. Thus, the testpattern is prevented from being extended, namely, an increase in thetest cost is avoided.

According to the present invention, by simply lowering the power supplypotential, bits having a low latch retaining capability can be screenedout even in a structure in which the power supply cannot be divided orthe like. In addition, the test mode setting pin can be used to lowerthe power supply potential in the memory macro. Owing to this, an SNMmargin can be obtained by lowering the power supply potential at thepower supply to which both the logics and the SRAMs are connected, withno need to lower the power supply of the logic section. Thus, a test canbe performed with the power supply voltage of the memory cell beinglowered on the individual macro basis. Therefore, the mode changebetween the stress mode and the normal operation mode is made easy. Thetest can be performed with no influence on the logic section. This isespecially effective for the LSI inspection because a plurality ofmacros can be inspected simultaneously when a BIST circuit is used.

According to the present invention, an SNM stress can be applied byperforming a dummy read operation at a low voltage with no pass/faildetermination on the read data. Then, after the potential is returnedback to the level used in the normal operation mode, the pass/faildetermination is performed. Therefore, an SNM stress test can beperformed while the read current is in exactly the same state as that inthe normal operation. Loss in the yield is not caused by the cellcurrent shortage due to the read operation at a low voltage. Since aplurality of word lines can be raised simultaneously, the readinspection time with no pass/fail determination is prevented from beingextended.

According to the present invention, the test mode signal is controlledby the BIST circuit. It is not necessary to perform the power supplycontrol or the like simultaneously on the SRAM macros in the entire LSI.A group of SRAM macros tested by a BIST circuit can be individuallyinspected. Therefore, a test can be performed with the power supplyvoltage of the memory cell being lowered in each group of SRAM macros tobe tested by each BIST circuit. This makes it possible to perform thetest with no influence on the logic section or the other groups of SRAMmacros, and the LSI inspection can be performed effectively. Since theSNM test can be performed by the BIST circuit, the following effects areprovided, for example: the designing restrictions on I/O pins in thechip is alleviated; and the LSI test time is shortened by thesimultaneous inspection of a plurality of macros.

These and other objects, features, aspects and advantages of the presentinvention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a main circuit configuration of a semiconductor memorydevice according to a first embodiment of the present invention;

FIG. 2 shows a layout image of a memory macro of the semiconductormemory device according to the first embodiment;

FIG. 3 is an exemplary configuration of a latch potential controlcircuit;

FIG. 4 shows a main circuit configuration of a semiconductor memorydevice according to a second embodiment of the present invention;

FIG. 5 shows a main circuit configuration of a semiconductor memorydevice according to a third embodiment of the present invention;

FIG. 6 is an exemplary circuit configuration of a word line driver;

FIG. 7 and FIG. 8 are each an exemplary circuit configuration of a bitline precharge circuit;

FIG. 9 shows a main circuit configuration of a semiconductor memorydevice according to a fourth embodiment of the present invention;

FIG. 10 is an exemplary circuit configuration of a control circuit forcontrolling the potential during the write operation to be low;

FIG. 11 and FIG. 12 each show a main circuit configuration of asemiconductor memory device according to a fifth embodiment of thepresent invention;

FIG. 13 is an operation timing diagram of the semiconductor memorydevice according to the first embodiment;

FIG. 14 is an operation timing diagram of the semiconductor memorydevice according to the second embodiment;

FIG. 15 illustrates the dependency of the SNM on the power supplyvoltage;

FIG. 16 and FIG. 17 each show a main circuit configuration of asemiconductor memory device according to a sixth embodiment of thepresent invention;

FIG. 18 illustrates problems of a conventional SRAM memory cell;

FIG. 19 shows a configuration of a conventional write buffer circuit.

DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment

A semiconductor memory device according to a first embodiment of thepresent invention will be described with reference to FIG. 1 throughFIG. 3, and FIG. 13. In the first embodiment, a technology for VDDMcontrol will be described. In this embodiment, for example, in order toprevent over-time deterioration caused by static noise margin (SNM)described above, a test mode setting pin 102 is provided so that a testmode which is different from a normal operation mode can be set. Thepower supply potential is controlled to reduce the SNM, and thus a statewhich has an SNM value equivalent to, or lower than, the SNM value afterthe over-time deterioration is created for inspection.

First, a technology for controlling the inverter latch power supply willbe described. FIG. 1 shows a main circuit configuration of asemiconductor memory device according to the first embodiment of thepresent invention. FIG. 2 shows a layout image of the semiconductormemory device according to the first embodiment in a memory macro(SRAM). In FIG. 2, a reference character 121 is a clock signal line, areference character 122 is a read/write control signal line, a referencecharacter 123 is a data input/output signal line, a reference character131 is a “DATA INPUT/OUTPUT SECTION,” and a reference character 133 is a“ROW DECODER.”

In the semiconductor memory device according to the first embodiment,the test mode setting pin 102 is used for selecting a normal mode forperforming a normal read/write operation or an SNM stress test mode forputting the SNM value to a value equivalent to or lower than the valueafter over-time deterioration. Sources of Pch Tr 108 and Pch Tr 111 in alatch section are connected to a node VDDM 100 which is separated fromthe power supply, so that the potential of the sources are controllableby a latch potential control circuit 101. As shown in a timing diagramin FIG. 13, when the semiconductor memory device is set to a test mode,a read/write control circuit 103 controls a node VDDM CONT 104 to be ata High potential at least while a word line 105 is open during the readoperation. The logic operation of High/Low potentials shown in FIG. 13is merely exemplary and can be freely set depending on the circuitdesign. The potential of the VDDM 100 is controlled to be slightlylowered when the potential of the VDDM CONT 104 becomes High.

FIG. 3 shows an exemplary configuration of the latch potential controlcircuit 101. The VDDM CONT 104 is usually at a Low potential, but iscontrolled to be at High potential at least while the word line 105 isopen during the read operation when the semiconductor memory device isset to the test mode. Owing to this control, in FIG. 3, a Pch Tr 140 isplaced into an OFF state, and a Pch Tr 141 is placed into an ON state.Since the Pch Tr 142 is always in a ON state, the potential of the VDDM100 is determined by the Pch Tr 142 and the Pch Tr 141, and is set to belower than the power supply potential. The reason why the Pch Tr 140 isprovided in addition to the Pch Tr 142 is as follows. Since the Pch Tr142 is always in an ON state and has a high capability, the Pch Tr 141provided for lowering the potential of the VDDM 100 would be required tohave a high capability without the Pch Tr 140. As a result, there wouldbe an inconvenience that a very strong through-current flows andtherefore the power consumption is increased.

Referring to FIG. 18, what happens when the potential of the VDDM 100 islowered will be described. The logic thresholds of the inverters 1007and 1008 are lowered while the potential levels of the bit lines 1001and 1002 remain the same. This decreases the latch retaining capability,and thus a state with a low SNM value can be created. When the node VDDM100 is at a low potential, the write operation itself is made easy.Therefore, if the VDDM 100 is kept at a potential lower than the VDDpotential for both the read and write operations, the write level cannotbe inspected. In order to accurately inspect the write level margin, thepotential of the VDDM 100 needs to be lowered only for the readoperation and to be raised back to the normal power supply potential forthe write operation.

When the potential of the VDDM 100 is lowered, the reduction in themagnitude of the cell current is less significant than in the case wherethe power supply potential of the entire memory macro is simply lowered,for the reasons described in the next paragraph. Because the reductionthe magnitude of the cell current is less significant as describedabove, a stress test can be performed with only the SNM beingeffectively reduced. As a result, a margin for the over-time SNMdeterioration can be obtained without any loss in the yield being causedby other factors such as the cell current or the write level.

Since the bit lines 106 and 107 are kept at High potential, thesource-drain voltage of the access Tr 1005 and the drive Tr 1012 is notchanged. The access Tr 1005 is usually set to have a higher resistancethan the drive Tr 1012 in order to suppress the potential of theintermediate node 1003 from being raised when the word line 105 is openand thus to obtain resistance against the reduction in the SNM.Therefore, the access Tr 1005 is more dominant than the drive Tr 1012 onthe cell current. In this embodiment, the potential of the word line105, which is equal to the gate potential of the access Tr 1005 having alarger influence on the cell current, is kept High. Therefore, thereduction in the magnitude of the cell current merely corresponds to theslight reduction in the gate potential of the drive Tr 1012 and thus isvery small, unlike in the case where the power supply potential of theentire memory macro is lowered to lower the SNM value.

Referring to FIG. 1, in order to reduce the SNM value significantly, itis desirable that the drive power supply potential of the word line 105and the precharge power supply potential of the bit lines 106 and 107are kept higher than the lower power supply potential controlled by thelatch control circuit 101. Even when one of the drive power supplypotential of the word line 105 and the precharge power supply potentialof the bit lines 106 and 107 is kept higher and the other is equal tothe lower power supply potential controlled by the latch control circuit101, the effect of reducing the SNM value is provided although beingless significant. When the reduction in the SNM value to be assumed asthe over-time deterioration is relatively small, only the word line 105may be kept at the normal potential while both the latch potential andthe precharge potential may be slightly lowered, for example. In thismanner, the reduction in the SNM value can be adjusted.

According to the present invention, the SNM stress test is also used asthe read operation of the normal operation test, utilizing the advantagethat “the deterioration in the magnitude of the cell current is verysmall even as compared with the deterioration in the normal operationmode”. Thus, no test pattern needs to be added for the SNM test, whichrestricts an increase in the inspection cost.

According to the present invention, the magnitude of the cell current isincreased than that in the normal operation mode because the gatepotential is boosted. According to the present invention, the magnitudeof the cell current is increased than that in the normal operation modebecause the potential of the bit lines is boosted. For this reason, theyield is not reduced for any reason related to the cell current. Thecontrol on the VDDM 100 may be performed only on the column which is atarget of operation. In this case, the driving load is alleviated andthus the dynamic control of the VDDM 100 is made easier. This makes iteasier to inspect only the read cycle during the normal inspectionpattern for the SNM stress test. An over-time deterioration amount ofthe semiconductor memory device may be assumed in consideration of bothan over-time deterioration amount of the SNM and an over-timedeterioration amount caused by high temperature, and the inspection maybe conducted at room temperature or a low temperature. This eliminatesthe necessity of performing an inspection at a plurality oftemperatures, which can reduce the cost.

Referring to FIG. 1, a method for obtaining a write level margin for theover-time deterioration or defect caused by operational environment willbe described. After the semiconductor memory device is set to the testmode, the latch potential control circuit 101 raises the potential ofthe VDDM 100 only during the write cycle in the test mode (opposite tothe operation which concerns the SNM in the read operation). Thisincreases the retaining capability of the inverter latch, and thus astress test mode for the write level can be created. A method forraising the potential of the VDDM 100 to a level higher than thepotential in the normal operation is realized by substantially the sameconcept as that of the circuit shown in FIG. 7 and FIG. 8 (thirdembodiment), and will be described later in detail. The effect providedby controlling the write level of each column in the stress test mode issubstantially the same as the effect provided by the control performedin the SNM stress test mode. The latch potential control circuit 101 maybe used for raising the SNM in the normal operation mode and may be usedas a write level stress circuit in the test mode. In this manner, thecircuit area can be reduced. An over-time deterioration amount of thesemiconductor memory device may be assumed in consideration of both anover-time deterioration amount of the write level and an over-timedeterioration amount caused by low temperature, and the inspection maybe conducted at room temperature or a low temperature. At a lowtemperature, the deterioration is more significant than at roomtemperature because Vt is raised.

Second Embodiment

A semiconductor memory device according to a second embodiment of thepresent invention will be described with reference to FIG. 4 and FIG. 8.In the second embodiment, a technology for VDDM cutoff will bedescribed. In FIG. 4, a reference character 500 is a column addressdecoder circuit and a reference character 501 is an output signal“COLADOUT” from the column address decoder circuit 500.

During the read operation in the test mode, an SNM stress mode can becreated by setting the VDDM 100 at a certain potential using the circuitin FIG. 3. Alternatively, as shown in FIG. 4, an SNM stress mode can becreated by cutting off the power supply to the VDDM 100 at the inverterlatch potential, using a cutoff Tr. This VDDM cutoff technique, whichuses a small number of devices and does not need a through-currentcomponent for obtaining a potential, is advantageous in consuming a verylow magnitude of current, despite that it is more difficult to obtain anintended potential as compared to the first embodiment

The control circuit for the VDDM 100 shown in FIG. 3 is usually providedfor the control as shown in FIG. 13. Alternatively, the control circuitshown in FIG. 3 may be easily adapted for use in the normal writeoperation as shown in FIG. 14 by merely changing logics. Owing to suchan arrangement, the circuit can be used as a write guarantee circuit inthe normal operation mode and can be used for the SNM stress test in thetest mode. Thus, the area of the semiconductor memory device can beeffectively used. For practical use, the level of the VDDM 100 may bethe same for the read operation and the write operation, with only themanner of controlling the VDDM 100 by the VDDM CONT 104 being changed.Preferably, different potential levels are adopted for the use as thewrite guarantee circuit and for the use in the SNM stress mode. In thismanner, at least a part of the device for obtaining the potential levelsis used for both purposes. Thus, both characteristics are optimizedwhile saving the area of silicon.

Third Embodiment

A semiconductor memory device according to a third embodiment of thepresent invention will be described with reference to FIG. 5 throughFIG. 8. In the third embodiment, a technology for boosting the voltageof word line and boosting the voltage of the bit lines will bedescribed. In FIG. 5, a reference character 204 is a bit line prechargecircuit.

As shown in FIG. 5, the memory cell is provided with a potential 201 forthe normal operation mode and also with a slightly higher potential 202for the test mode. FIG. 6 shows an exemplary configuration of a wordline driver 203. The test mode setting pin 102 is set to a Low potentialin the normal operation mode and to a High potential in the test mode.When the potential of the test mode setting pin 102 becomes High, a PchTr 205 is cut off and the potential 201 for the normal operation mode isprevented from being supplied. Instead, a Pch Tr 206 is placed into anON state and the potential 202 for the test mode is supplied. When thepotential of the word line 105 becomes High, the ON resistance of theaccess Tr is reduced. As a result, the potential of the intermediatenode 1003 shown in FIG. 18 is raised more and the SNM is reduced. Thus,an SNM stress mode can be created

FIG. 7 shows an exemplary configuration of a bit line precharge circuit204 according to the present invention. The memory cell is provided witha potential 201 for the normal operation mode and also with a slightlyhigher potential 202 for the test mode. The control on the power supplyby setting the test mode setting pin 102 is the same as that in thecircuit in FIG. 6. Since the potential of the bit lines is High, theintermediate node 1003 determined by the access Tr and the drive Tr israised more. Thus, a low SNM state in which retained data is likely tobe lost is created.

Fourth Embodiment

A semiconductor memory device according to a fourth embodiment of thepresent invention will be described with reference to FIG. 6 throughFIG. 9. In the fourth embodiment, a technology regarding the write levelstress mode other than the VDDM control described in the firstembodiment will be described.

The test mode setting pin 102 is provided so that the test mode can beset. Then, only during the write operation in the test mode, thepotential of the word line connected to the access Tr is lowered to alevel lower than the potential in the normal operation mode. Forcontrolling the power supply, the potential 202 shown in FIG. 6 is setto be lower than the potential 201 for the normal operation mode.Referring to FIG. 18, when the ON resistance of the access Tr 1005 ishigh, the potential of the intermediate node 1003 determined by the PchTr 1011 and the access Tr 1005 is not sufficiently lowered, as a resultof which it becomes difficult to write. Thus, a write level stress modecan be created. Since this control is for reducing the ON resistance ofthe access Tr, the test mode needs to be set only for the writeoperation in order not to influence the cell.

Referring to FIG. 7, the potential 202 is set to be lower than thepotential 201. In the test mode, the potential of the test mode settingpin 102 is raised to High and the potential 202 is supplied. When thebit line precharge potential is lowered, the potential of the higher bitline among the complementary bit lines is lowered, as a result of whichit becomes difficult to write. The power may be provided from two powersupplies as described above with reference to FIG. 6. Alternatively, thecircuit may be provided with power from one power supply as shown inFIG. 8. In this case, the same level of potential is supplied for thenormal operation mode and for the test mode, but a lower potential canbe obtained by dividing the resistance or by lowering the Vt potentialat the time of Tr driving. In the test mode, the potential of the testmode setting pin 102 is raised to High and the Pch Tr 205 is placed intoan OFF state. Thus, the control is performed by lowering the Vtpotential of the Nch Tr 207. In this circuit configuration, when theoperation cycle is sufficiently short, the potential which is lower thanthe potential 201 by the Vt potential of the Nch Tr 207 is supplied to anode 211.

The potential of the lower bit line among the complementary bit linesmay be slightly raised during the write operation. In this manner also,a state where it is difficult to write can be created. FIG. 9 shows anexemplary circuit configuration in such a state. The circuitconfiguration shown in FIG. 9 is usable in place of a conventional writebuffer circuit (FIG. 19). In FIG. 19, the VSS potential is transferredto the bit lines 106 and 107 via the Nch Tr. By contrast, in FIG. 9,when the test mode setting pin 102 is set to a High potential, a node310 is usually supplied with a potential via a Pch Tr 312. Therefore,when the operation cycle is sufficiently short, the potential of thenode 310 is higher than the potential of the VSS node by Vt. Referringto FIG. 18, when the potential of the bit line 1002 is lowered to thelower level to perform the write operation, the Low level of the bitline 1002 does not become sufficiently low as compared to the logicthreshold of the inverter 1008 which is operated at the Low potential.Thus, it becomes difficult to write. Alternatively, as shown in FIG. 10,the supply potential to the VSSM may be defined by dividing thepotential by a Tr or a resistor.

Fifth Embodiment

A semiconductor memory device according to a fifth embodiment of thepresent invention will be described with reference to FIG. 5, FIG. 6,and FIG. 11 through FIG. 13. In the fifth embodiment, a technologyregarding back bias will be described. In FIG. 13, a reference character“MODE” is a signal which represents a mode (normal operation and test,etc) of the memory, and a reference character “READ/WRITE” is a signalwhich represents a read cycle/write cycle of the memory. The read cycleis a period that a data is read from the memory, and the write cycle isa period that a data is written to the memory.

In the first and second embodiments described above, the sourcepotential provided by the memory latch power supply is controlled. Inthe third embodiment, the substrate potential of the Pch Tr of thememory cell is electrically separated from the source potential of thePch Tr. In the test mode, the substrate potential of the Pch Tr isalways supplied with a back bias, or the control is performed at thesame timing as the VDDM CONT 104 shown in FIG. 13. By controlling thesubstrate potential of the Pch Tr of the memory cell in the direction inwhich the back bias is supplied, the threshold of the Pch Tr becomeshigh. Thus, an inspection is made possible in a state simulating thestate after the over-time deterioration.

According to the first embodiment, the deterioration in the cell currentis less significant than the amount by which the power supply potentialis lowered in expectation of the SNM reduction. The technology of usingthe substrate potential of the Pch Tr in this embodiment is superior onthis point and has an advantage that “there is substantially nodifference in the magnitude of the cell current from the normaloperation mode”. Because the magnitude of the cell current is the sameas that in the normal inspection, the read operation in the normalinspection can be easily replaced with the SNM stress test.

As shown in FIG. 6, the substrate potential of the Nch Tr of the memorycell may be separated from the source potential of the Nch Tr and aforward bias may be applied to the substrate potential of the Nch Tr.For deteriorating the SNM, substantially the same effect is provided. Inthis test mode, a larger magnitude of cell current is obtained than thatin the normal operation mode. Therefore, the yield cannot be reduced forany reason related to the cell current. However, since the magnitude ofthe cell current is larger than that in the normal operation mode, atest for determining the magnitude of the cell current needs to beseparately performed.

By contrast, a forward bias may be applied to a substrate potential 400of a Pch Tr of a memory cell shown in FIG. 11. In this case, thethreshold level of the Pch Tr becomes low. Thus, an inspection is madepossible in a state simulating the write level after the over-timedeterioration. As shown in FIG. 12, the substrate potential of the NchTr of the memory cell may be separated from the source potential of theNch Tr and a back bias may be applied to the substrate potential 410 ofthe Nch Tr. Substantially the same effect is provided.

Sixth Embodiment

A semiconductor memory device according to a sixth embodiment of thepresent invention will be described with reference to FIG. 15 throughFIG. 17. In the sixth embodiment, a technology for determining whetherto lower the supply voltage, to perform pseudo-read, or to use BIST(Built In Self Test. In FIG. 16, a reference character 424 is a memoryfunction section.

The SNM usually discussed is an SNM in the case where the word line isopen. Even where the word line is kept closed, the cell having a weakstability loses retained data by lowering the supply voltage. Thisallows screening. Unlike the technologies requiring power supplyseparation, this method does not require power supply separation.Therefore, this method has advantages of being easy to implement,involving no disadvantage regarding the area due to the power supplyseparation, and easily forming a stronger power supply system.

Usually, the logics and the SRAMs are connected to the same powersupply. Therefore, a technique of lowering the power supply potential ofthe entire memory macro influences the logic section. In addition, whena plurality of macros are to be tested simultaneously with BIST, theplurality of macros of various capacities cannot be testedsimultaneously because the macros are connected to the same powersupply. In order to solve this problem, as shown in FIG. 16, the powersupply potential of the entire macro or the memory cell is connected tothe potential 202 which is lower than the potential 201 for the normaloperation only in the test mode. In this manner, an SNM stress test canbe performed only on the macro of interest.

FIG. 15 shows the dependency of the SNM on the voltage. Three curvesshow the tendency at which the SNM varies in accordance with the β ratio(i.e., the driving capability of the drive Tr/the driving capability ofthe access Tr). One aspect of the present invention can be furtherimproved so that the cell stability where the access Tr is open is theactual reading margin (i.e., SNM). Another aspect of the presentinvention can be further improved so that the magnitude of the cellcurrency is the same as that in the normal operation. Such animprovement is realized by a technique that the read operation isperformed while the word line 105 is open, but the pass/faildetermination is not made on this stage. After the semiconductor memorydevice is returned to the normal operation, the reading operation isagain performed and the pass/fail determination is made. Since theaccess Tr becomes conductive with a relatively small SNM, an SNM stressis applied. However, the read data is determined in the subsequentnormal operation state. Therefore, no problem occurs regarding the cellcurrent.

The above technique is disadvantageous in that the inspection patterntakes a longer time because the reading operation is performed oncewithout the pass/fail determination. In order to prevent the inspectiontime from being excessively long, a plurality of word lines may besimultaneously activated in the pseudo-read state in the test mode inwhich the pass/fail determination is not performed.

In this case, a sufficient SNM stress may not be applied because thepotential of the bit line is lowered by the read data. In order to avoidthis, in the pseudo-read state in the test mode in which the pass/faildetermination is not performed, the bit line maybe precharged. In thismanner, the potential of the bit line is prevented from being loweredfrom a High level, and the SNM stress can be sufficiently applied.

The inspection time is important for the LSI inspection cost. In orderto shorten the inspection time, BIST is often used in system LSIs. Aplurality of memory macros can be inspected simultaneously by a built-inBIST circuit, which is effective to shorten the inspection time. A BISTcircuit 431 is connected as shown in FIG. 17 and controls the inspectionof a memory cell 430. The BIST circuit is applicable to inspection ofactual LSIs in this manner.

While the invention has been described in detail, the foregoingdescription is in all aspects illustrative and not restrictive. It isunderstood that numerous other modifications and variations can bedevised without departing from the scope of the invention.

1-22. (canceled)
 23. A semiconductor memory device for storinginformation on a memory cell using a potential change in a word line anda bit line, the semiconductor memory device comprising: a memory cellhaving a circuit configuration in which a potential supplied to the wordline is different from at least one of a potential supplied to a sourceof a load transistor included in a latch section and a potentialsupplied to the bit line; and a first control circuit for switching afirst operation mode and a second operation mode to each other inaccordance with a signal applied to a mode setting pin, wherein thepotential supplied to the word line corresponding to at least one of thepotential supplied to the source of the load transistor and thepotential supplied to the bit line, and the potential supplied to theword line in a ON state, are different from a potential in the firstoperation mode, during an arbitrary period of at least a read operationin the second operation mode.
 24. The semiconductor memory deviceaccording to claim 23, further comprising a second control circuit forcontrolling the potential supplied to the word line corresponding to atleast one of the potential supplied to the source of the load transistorand the potential supplied to the bit line, and the potential suppliedto the word line in a ON state to be higher than a potential in thefirst operation mode, during an arbitrary period of at least a readoperation in the second operation mode.